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Hitachi Power Semiconductor Device Electronic Components Datasheet

A872 Datasheet

2SA872

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2SA872, 2SA872A
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SC1775/A
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base
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Hitachi Power Semiconductor Device Electronic Components Datasheet

A872 Datasheet

2SA872

No Preview Available !

2SA872, 2SA872A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SA872
–90
–90
–5
–50
300
150
–55 to +150
2SA872A
–120
–120
–5
–50
300
150
–50 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
2SA872
Item
Symbol Min Typ
Collector to emitter
breakdown voltage
V(BR)CEO –90 —
Collector cutoff current ICBO
——
——
DC current tarnsfer ratio hFE1*1 250 —
2SA872A
Max Min Typ
— –120 —
–0.5 —
——
800 250
hFE2 160 — — 160 —
Base to emitter voltage VBE
— — –0.75 — —
Collector to emitter
saturation voltage
VCE(sat)
–0.5 —
Gain bandwidth product fT
— 120 — —
120
Collector output
capacitance
Noise figure
Cob — 1.8 — — 1.8
NF — — 5.0 — —
— — 1.5 —
Note: 1. The 2SA872/A is grouped by hFE1 as follows.
DE
250 to 500 400 to 800
Max Unit Test conditions
—V
IC = –1 mA, RBE =
µA
–0.5 µA
800
–0.75 V
–0.5 V
— MHz
— pF
VCB = –75 V, IE = 0
VCE = –100 V, IE = 0
VCE = –12 V,
IC = –2 mA
VCE = –12 V,
IC = –0.1 mA
VCE = –12 V,
IC = –2 mA
IC = –10 mA,
IB = –1 mA
VCE = –12 V,
IC = –2 mA
VCB = –25 V, IE = 0,
f = 1 MHz
5.0 dB
1.5 dB
VCE = –6 V, f = 10 Hz
IC = –50 µA
Rg = 50 k
f = 1 kHz
2


Part Number A872
Description 2SA872
Maker Hitachi Semiconductor
Total Page 7 Pages
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