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Hitachi Power Semiconductor Device Electronic Components Datasheet

C2979 Datasheet

2SC2979

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2SC2979
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
IB
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
900
800
7
3
6
1.5
40
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C


Hitachi Power Semiconductor Device Electronic Components Datasheet

C2979 Datasheet

2SC2979

No Preview Available !

2SC2979
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter sustain
voltage
Symbol Min
VCEO(sus)
800
VCEX(sus)
800
Typ
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note: 1. Pulse test
V(BR)EBO
I CBO
I CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
t on
t stg
tf
7
15
7
Max Unit
—V
—V
—V
100 µA
100 µA
1.0 V
1.5 V
1.0 µs
3.0 µs
1.0 µs
Test conditions
IC = 0.2 A, RBE = , L = 100
mH
IC = 3 A, IB1 = 0.9 A, IB2 = –0.6
A, VBE = –5.0 V, L = 180 µH,
Clamped
IE = 10 mA, IC = 0
VCB = 750 V, IE = 0
VCE = 650 V, RBE =
VCE = 5 V, IC = 0.3 A*1
VCE = 5 V, IC = 1.5 A*1
IC = 0.75 A, IB = 0.15 A*1
IC = 1.5 A, IB1 = 0.3 A,
IB2 = –0.75 A, VCC 250 V
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
10
3 iC(peak)
ICmax(Continuous)
1.0
0.3
0.1
0.03
0.01 Ta = 25°C, 1 Shot
0.003
0.001
1 3 10 30 100 300 1,000
Collector to emitter voltage VCE (V)
2


Part Number C2979
Description 2SC2979
Maker Hitachi Semiconductor
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C2979 Datasheet PDF






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