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D2101 - 2SD2101

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Datasheet Details

Part number D2101
Manufacturer Hitachi Semiconductor
File Size 34.89 KB
Description 2SD2101
Datasheet download datasheet D2101 Datasheet
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2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 3 kΩ (Typ) 150 Ω (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Rating 200 200 7 10 15 2 30 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 200 200 170 7 — — 1500 — — — — Typ — — — — — — — — — — — Max — — — — 10 50 — 1.5 3.0 2.0 3.5 V V Unit V V V V µA Test conditions I C = 0.
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