HM514400CL memory equivalent, 1/048/576-word x 4-bit dynamic random access memory.
* Single 5 V (±10%)
* High speed — Access time 60 ns/70 ns/80 ns (max)
* Low power dissipation — Active mode 605 mW/550 mW/495 mW (max) — Standby mode 11 mW (.
Pin name A0 to A9 A0 to A9 I/O1 to I/O4 RAS CAS WE OE VCC VSS Function Address input Refresh address input Data-in/Data-out Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground
4
Block Diagram
RAS
Row Driver.
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