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HM5164805F - (HM5164805F / HM5165805F) 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh

This page provides the datasheet information for the HM5164805F, a member of the HM5165805F (HM5164805F / HM5165805F) 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh family.

Description

The Hitachi HM5164805F Series, HM5165805F Series are 64M-bit dynamic RAMs organized as 8,388,608-word × 8-bit.

They have realized high performance and low power by employing CMOS process technology.

Features

  • Single 3.3 V supply: 3.3 V ± 0.3 V.
  • Access time: 50 ns/60 ns (max).
  • Power dissipation  Active: 414 mW/378 mW (max) (HM5164805F Series) : 486 mW/414 mW (max) (HM5165805F Series)  Standby : 1.8 mW (max) (CMOS interface) : 1.1 mW (max) (L-version).
  • EDO page mode capability.
  • Refresh cycles  RAS-only refresh 8192 cycles /64 ms (HM5164805F, HM5164805FL) 4096 cycles /64 ms (HM5165805F, HM5165805FL)  CBR/Hidden refresh 4096 cycles /64 ms (HM5164805F, HM5.

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Datasheet Details

Part number HM5164805F
Manufacturer Hitachi (now Renesas)
File Size 490.79 KB
Description (HM5164805F / HM5165805F) 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
Datasheet download datasheet HM5164805F Datasheet
Additional preview pages of the HM5164805F datasheet.

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Full PDF Text Transcription

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HM5164805F Series HM5165805F Series 64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh ADE-203-1057B (Z) Rev. 2.0 Nov. 30, 1999 Description The Hitachi HM5164805F Series, HM5165805F Series are 64M-bit dynamic RAMs organized as 8,388,608-word × 8-bit. They have realized high performance and low power by employing CMOS process technology. HM5164805F Series, HM5165805F Series offer Extended Data Out (EDO) Page Mode as a high speed access mode. They have the package variation of standard 32-pin plastic SOJ and standard 32pin plastic TSOPII. Features • Single 3.3 V supply: 3.3 V ± 0.3 V • Access time: 50 ns/60 ns (max) • Power dissipation  Active: 414 mW/378 mW (max) (HM5164805F Series) : 486 mW/414 mW (max) (HM5165805F Series)  Standby : 1.8 mW (max) (CMOS interface) : 1.
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