Datasheet4U Logo Datasheet4U.com

HM62W1400H Datasheet 4M High Speed SRAM

Manufacturer: Hitachi Semiconductor (now Renesas)

General Description

The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology.

It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.

Overview

www.DataSheet4U.com HM62W1400H Series 4M High Speed SRAM (4-Mword × 1-bit) ADE-203-773E (Z) Rev.

2.0 Nov.

Key Features

  • Single 3.3 V supply : 3.3 V ± 0.3 V.
  • Access time 12/15 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 180/160 mA (max).
  • TTL standby current: 60/50 mA (max).
  • CMOS standby current: 5 mA (max) : 1 mA (max) (L-version).
  • Data retension current: 0.6 mA (max) (L-version).
  • Data retension vol.