Datasheet Summary
2SJ291
Silicon P-Channel MOS FET
November 1996
..
Application
High speed power switching
Features
- -
- -
- - Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
TO-220AB
3 1. Gate 2. Drain (Flange) 3....