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K1094 - 2SK1094

Description

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See characteristic curves of 2SK971.

Power vs.

Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device.
  • Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Sto.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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K1093 2SK1093
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Full PDF Text Transcription

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www.DataSheet4U.com 2SK1094 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3.
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