4 V gate drive device Can be driven from 5 V source.
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
Datasheet pdf - http://www. DataSheet4U. net/
www. DataSheet. co. kr
2SK1307
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drai.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1307. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet.co.kr 2SK1307 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device ...
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s • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SK1307 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
K1307 Datasheet
