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Hitachi Power Semiconductor Device Electronic Components Datasheet

K1670 Datasheet

2SK1670

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2SK1670
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (trr = 90 ns)
Suitable for motor control, switching regulator and DC – DC converter
Outline
TO-3PFM
D
G1
2
3
1. Gate
2. Drain
3. Source
S
Free Datasheet http://www.datasheet4u.net/


Hitachi Power Semiconductor Device Electronic Components Datasheet

K1670 Datasheet

2SK1670

No Preview Available !

2SK1670
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
250
±30
30
120
30
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
Free Datasheet http://www.datasheet4u.net/


Part Number K1670
Description 2SK1670
Maker Hitachi Semiconductor
PDF Download

K1670 Datasheet PDF






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