K1670 - 2SK1670

Datasheet Summary

Features

Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC.
DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source Free Datasheet http://www. datasheet4u. net/ 2SK1670 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain.

Hitachi Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	K1670
Manufacturer	Hitachi Semiconductor
File Size	49.40 KB
Description	2SK1670
Datasheet	K1670 Datasheet
Additional preview pages of the K1670 datasheet.

📁 Similar Datasheet

K1670HA600 - Medium Voltage Thyristor (IXYS)
K1670HA650 - Medium Voltage Thyristor (IXYS)
K1601 - Sinewave (MTRONPTI)
K1601T - CMOS/TTL (MTRONPTI)
K1601TE - TCVCXO (MTRONPTI)
K1602 - Sinewave (MTRONPTI)
K1602SE - TCVCXO (MTRONPTI)
K1602T - CMOS/TTL (MTRONPTI)
K1602TE - TCVCXO (MTRONPTI)
K1603 - 2SK1603 (Inchange Semiconductor)

Other Datasheets by Hitachi Semiconductor

K1622 - Silicon N-Channel MOS FET
K1626 - 2SK1626
K1626 - 2SK1626
K1628 - 2SK1628
K168 - 2SK168

Full PDF Text Transcription

Click to expand full text

2SK1670 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC – DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source Free Datasheet http://www.datasheet4u.net/ 2SK1670 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.

Published: Feb 8, 2014 |