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Hitachi Power Semiconductor Device Electronic Components Datasheet

K1807 Datasheet

2SK1807

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2SK1807
Silicon N-Channel MOS FET
Application
High speed power switching
www.DataSheet4U.com
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S


Hitachi Power Semiconductor Device Electronic Components Datasheet

K1807 Datasheet

2SK1807

No Preview Available !

2SK1807
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
www.DataNSohteeest4U1..coPmW 10 µs, duty cycle 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
900
±30
4
10
4
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2


Part Number K1807
Description 2SK1807
Maker Hitachi Semiconductor
PDF Download

K1807 Datasheet PDF





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