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K2008 - Silicon N-Channel MOS FET

Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No Secondary Breakdown.
  • Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G1 2 3 1. Gate 2. Drain 3. Source S 2SK2008 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤.

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Datasheet Details

Part number K2008
Manufacturer Hitachi Semiconductor
File Size 32.67 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet K2008 Datasheet
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Full PDF Text Transcription

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2SK2008 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G1 2 3 1. Gate 2. Drain 3. Source S 2SK2008 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
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