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Hitachi Power Semiconductor Device Electronic Components Datasheet

K2114 Datasheet

2SK2114

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2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for Switching regulator
Outline
TO-220CFM
D 12 3
1. Gate
G 2. Drain
3. Source
S


Hitachi Power Semiconductor Device Electronic Components Datasheet

K2114 Datasheet

2SK2114

No Preview Available !

2SK2114, 2SK2115
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK2114
2SK2115
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
5
20
5
35
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2


Part Number K2114
Description 2SK2114
Maker Hitachi Semiconductor
PDF Download

K2114 Datasheet PDF






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