Datasheet4U Logo Datasheet4U.com

K2225 - 2SK2225

Features

  • High breakdown voltage (VDSS = 1500 V).
  • High speed switching.
  • Low drive current.
  • No Secondary Breakdown.
  • Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st. Edition D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel tempera.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K2225 High Speed Power Switching MOSFET Renesas
K222 2SK222 Sanyo Semicon Device
K2220 Silicon N Channel MOS FET Renesas
K2221 Silicon N-Channel MOSFET Renesas
K2222 N-Channel Transistor ETC

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K2220 2SK2220
K2221 2SK2221
K2247 2SK2247

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st. Edition D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Published: |