K2590 - Silicon N-Channel MOSFET

Features

Low on-resistance.
High speed switching.
Low drive current.
No Secondary Breakdown.
Suitable for Switching regulator, DC-DC converter, Motor Control Outline TO-220AB Preliminary D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK2590 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage tempe.

Hitachi Semiconductor

Datasheet Details

Part number	K2590
Manufacturer	Hitachi Semiconductor
File Size	29.53 KB
Description	Silicon N-Channel MOSFET
Datasheet	K2590 Datasheet
Additional preview pages of the K2590 datasheet.

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Full PDF Text Transcription

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2SK2590 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control Outline TO-220AB Preliminary D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK2590 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.

Published: Nov 18, 2014 |