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K2885 - 2SK2885

Features

  • Low on-resistance RDS(on) = 10mΩ typ.
  • 4V gate drive devices.
  • High speed switching Outline LDPAK D G S ADE-208-545 A 2nd. Edition 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K2800 2SK2800

Full PDF Text Transcription

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2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK D G S ADE-208-545 A 2nd. Edition 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.
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