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Hitachi Power Semiconductor Device Electronic Components Datasheet

K2885 Datasheet

2SK2885

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2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 10mtyp.
4V gate drive devices.
High speed switching
Outline
LDPAK
D
G
S
ADE-208-545 A
2nd. Edition
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain


Hitachi Power Semiconductor Device Electronic Components Datasheet

K2885 Datasheet

2SK2885

No Preview Available !

2SK2885(L), 2SK2885(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
30
±20
45
180
45
75
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2


Part Number K2885
Description 2SK2885
Maker Hitachi Semiconductor
PDF Download

K2885 Datasheet PDF






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