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K3148 - 2SK3148

Features

  • Low on-resistance R DS = 45 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline TO.
  • 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3148 www. DataSheet4U. com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note:.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K3140 2SK3140
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Full PDF Text Transcription

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www.DataSheet4U.com 2SK3148 Silicon N Channel MOS FET High Speed Power Switching ADE-208-748A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3148 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 20 60 20 20 40 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.
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