Datasheet4U Logo Datasheet4U.com

HMC520 - GaAs MMIC I/Q MIXER

Description

The HMC520 is a compact I /Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter.

The chip utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process.

Features

  • Wide IF Bandwidth: DC - 3.5 GHz Image Rejection: 40 dB LO to RF Isolation: 45 dB High Input IP3: +22 dBm 3 MIXERS - CHIP.
  • C-Band VSAT.
  • Military Radar and ECM Functional Diagram General.

📥 Download Datasheet

Datasheet preview – HMC520

Datasheet Details

Part number HMC520
Manufacturer Hittite Microwave
File Size 336.09 KB
Description GaAs MMIC I/Q MIXER
Datasheet download datasheet HMC520 Datasheet
Additional preview pages of the HMC520 datasheet.

📁 Similar Datasheet

  • HMC520A - MMIC I/Q Mixer (Analog Devices)
  • HMC520LC4 - GaAs MMIC I/Q MIXER (Analog Devices)
  • HMC521ALC4 - GaAs MMIC I/Q MIXER (Analog Devices)
  • HMC521LC4 - GaAs MMIC I/Q MIXER (Analog Devices)
  • HMC522LC4 - GaAs MMIC I/Q MIXER (Analog Devices)
  • HMC523LC4 - GaAs MMIC I/Q MIXER (Analog Devices)
  • HMC524LC3B - GaAs MMIC I/Q MIXER (Analog Devices)
  • HMC525ALC4 - GaAs MMIC I/Q MIXER (Analog Devices)
  • HMC525LC4 - GaAs MMIC I/Q MIXER (Analog Devices)
  • HMC526LC4 - GaAs MMIC I/Q MIXER (Analog Devices)
Other Datasheets by Hittite Microwave

Full PDF Text Transcription

Click to expand full text
HMC520 v00.1004 www.DataSheet4U.com GaAs MMIC I/Q MIXER 6 - 10 GHz Typical Applications The HMC520 is ideal for: • Point-to-Point and Point-to-Multi-Point Radio Features Wide IF Bandwidth: DC - 3.5 GHz Image Rejection: 40 dB LO to RF Isolation: 45 dB High Input IP3: +22 dBm 3 MIXERS - CHIP • C-Band VSAT • Military Radar and ECM Functional Diagram General Description The HMC520 is a compact I /Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The chip utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process. All data shown below is taken with the chip mounted in a 50 Ohm test fixture and includes the effects of 1 mil diameter x 20 mil length bond wires on each port.
Published: |