HMC-ALH508
Features
Noise Figure: <5 d B P1d B: +7 d Bm Gain: 13 d B Supply Voltage: +2.4V 50 Ohm Matched Input/Output Die Size: 3.2 x 1.6 x 0.1 mm
LOW NOISE AMPLIFIERS
- CHIP
Typical Applications
This HMC-ALH508 is ideal for:
- Short Haul / High Capacity Links
- Wireless LANs
- Automotive Radar
- Military & Space
- E-Band munication Systems
Functional Diagram
General Description
The HMC-ALH508 is a three stage Ga As HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH508 features
13 d B of small signal gain, 4.5 d B of noise figure and an output power of +7 d Bm at 1d B pression from two supply voltages at 2.1V and 2.4V respectively. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. This versatile LNA is patible with conventional die attach methods, as well as thermopression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is...
