HMC435MS8G
Features
High Isolation: 60 d B @ 1 GHz 50 d B @ 2 GHz Positive Control: 0/+5V 51 d Bm Input IP3 Non-Reflective Design MS8G SMT Package, 14.8 mm2
Typical Applications
The HMC435MS8G is ideal for:
- Basestation Infrastructure
- MMDS & 3.5 GHz WLL
- CATV/CMTS
- Test Instrumentation
Functional Diagram
General Description
The HMC435MS8G is a non-reflective DC to 4 GHz Ga As MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 d B isolation, low 0.8 d B insertion loss and +50 d Bm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1d B pression point of +31 d Bm. On-chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents.
SWITCHES
- SMT
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter Frequency DC
- 2.5 GHz DC
- 3.6 GHz DC
- 4.0 GHz DC
- 1.0 GHz DC
- 2.0 GHz...
