• Phototransistor output
• Accurate position sensing
• Four mounting configurations
• 0.125 in.(3.18 mm) slot width
• Choice of detector aperture
• Choice of opaque or IR transmissive housings
The HOA086X/087X series consists of an infrared
emitting diode facing an NPN silicon phototransistor
encased in a black thermoplastic housing. The
phototransistor switching takes place whenever an
opaque object passes through the slot between emitter
and detector. This series allows the user to choose from
available options: (1) mounting tab configurations, (2)
lead spacing, (3) electro-optical characteristics, (4)
detector aperture size, and (5) housing materials.
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.010(0.25)
2 plc decimals ±0.020(0.51)
The HOA086X series utilizes an IR transmissive
polysulfone housing which features smooth optical
faces without external aperture openings; this feature is
desirable when aperture blockage from airborne
contaminants is a possibility. The HOA087X series
employs an opaque polysulfone housing with aperture
openings for use in applications in which maximum
rejection of ambient light is important and in situations
where maximum position resolution is desired. The
HOA086X/087X series employs plastic molded
components. For additional component information see
SEP8506 and SDP8406.
Housing material is polysulfone. Housings are soluble in
chlorinated hydrocarbons and ketones. Recommended
cleaning agents are methanol and isopropanol.
To specify the complete product characteristics, see the
PART NUMBER GUIDE.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.