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SEP8506 - GaAs Infrared Emitting Diode

Description

The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package.

The chip is positioned to emit radiation through a plastic lens from the side of the package.

Features

  • Side-emitting plastic package.
  • 50¡ (nominal) beam angle.
  • 935 nm wavelength.
  • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger INFRA-20.TIF.

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Datasheet Details

Part number SEP8506
Manufacturer Honeywell
File Size 340.25 KB
Description GaAs Infrared Emitting Diode
Datasheet download datasheet SEP8506 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ (nominal) beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger INFRA-20.TIF DESCRIPTION The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DIM_071.ds4 40 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
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