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2SB507 Datasheet Preview

2SB507 Datasheet

PNP Transistor

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BIPOLAR TRANSISTOR (PNP)
FEATURES
Complementary to NPN 2SD313
Low Collector-Emitter Saturation Voltage
MECHANICALDATA
Case:TO-220
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Moisture Sensitivity: Level 1 perJ-STD-020
Weight:2.30grams(approximate)
2SB507
1.BASE
2.COLLECTOR(CASE)
3.EMITTER
TO-220
Equivalent Circuit
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-3
A
Collector Power Dissipation
PC
1.75
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
-55~+150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Max Unit
Collector-base breakdown voltage
V(BR)CBO
-60
V
Collector-emitter breakdown voltage V * (BR)CEO
-60
V
Emitter-base breakdown voltage
V(BR)EBO
-5
V
Collector cut-off current
ICBO
-100 μA
Collector cut-off current
ICEO
-5 mA
Emitter cut-off current
IEBO
-1 mA
DC current gain *
hFE(1) *
hFE(2) *
40
320
40
Collector-emitter saturation voltage * V * CE(sat)
-1
V
Base-emitter voltage*
VBE*
-1.5 V
Transition frequency
fT
5
MHz
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
Test conditions
IC =-100uA, IE=0
IC =-10mA, IB=0
IE=-100μA, IC=0
VCB=-20V, IE=0
VCE=-60V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-1A
VCE=-2V, IC=-0.1A
IC=-2A, IB=-200mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-500mA,
f=1MHz
THERMAL CHARACTERISTICS
Parameter
Thermal resistance junction to case
Symbol
RθJA
Max
4.16
Unit
°C/W
CLASSIFICATION of hFE(1)
Rank
C
Range
40-80
©GUANGDONGHOTTECHINDUSTRIALCO.,LTD
D
60-120
E
100-200
E-mail:hkt@heketai.com
F
160-320
1/ 3




Hottech

2SB507 Datasheet Preview

2SB507 Datasheet

PNP Transistor

No Preview Available !

BIPOLAR TRANSISTOR (PNP)
Typical Characteristics
2SB507
©GUANGDONGHOTTECHINDUSTRIALCO.,LTD
There are two limitation on the power handling
ability of a transistor: average junction temperature
and second breakdown safe operating area curves
indicate IC-VCE limits of the transistor that must be
observed of reliable operation i.e., the transistor
must not be subjected to greater dissipation than
curves indicate.
The data of SOA curve is based on TJ(PK)=150°C.At
high case temperatures,thermal limitation will
reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
E-mail:hkt@heketai.com
2/ 3


Part Number 2SB507
Description PNP Transistor
Maker Hottech
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2SB507 Datasheet PDF






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