CS12N65FA9H datasheet by Huajin Discrete Devices.
| Part number | CS12N65FA9H |
|---|---|
| Datasheet | CS12N65FA9H-HuajinDiscreteDevices.pdf |
| File Size | 222.35 KB |
| Manufacturer | Huajin Discrete Devices |
| Description | Silicon N-Channel Power MOSFET |
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： CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
View CS12N65FA9R datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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CS12N65FA9R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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