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Huajin Discrete Devices

CS12N65FA9H Datasheet Preview

CS12N65FA9H Datasheet

Silicon N-Channel Power MOSFET

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Huajing Discrete Devices
R
Silicon N-Channel Power MOSFET
CS12N65F A9H
General Description
CS12N65F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD (TC=25)
RDS(ON)Typ
650
12
55
0.54
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson0.7)
l Low Gate Charge (Typical Data:44nC)
l Low Reverse transfer capacitances(Typical:16pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
650
12
10
48
±30
700
100
4.5
5.0
55
0.44
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
Page 1 of 10 2012




Huajin Discrete Devices

CS12N65FA9H Datasheet Preview

CS12N65FA9H Datasheet

Silicon N-Channel Power MOSFET

No Preview Available !

Huajing Discrete Devices
R CS12N65F A9H
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
Test Conditions
VGS=10V,ID=6A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =6.0A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =12.0A VDD = 325V
VGS = 10V RG = 4.7
ID =12.0A VDD =325V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.74 --
-- -- 1
-- -- 100
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.54 0.7
2.0 4.0
Units
V
Rating
Min. Typ. Max.
-- 12 --
-- 2060 --
-- 184 --
-- 16 --
Units
S
pF
Rating
Min. Typ. Max.
-- 15 --
-- 18 --
-- 44 --
-- 22 --
-- 44
-- 6.5 --
-- 18 --
Units
ns
nC
Page 2 of 10 2012


Part Number CS12N65FA9H
Description Silicon N-Channel Power MOSFET
Maker Huajin Discrete Devices
Total Page 10 Pages
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