CS7N60FA9HD datasheet by Huajing Discrete Devices.
| Part number | CS7N60FA9HD |
|---|---|
| Datasheet | CS7N60FA9HD-HuajingDiscreteDevices.pdf |
| File Size | 658.47 KB |
| Manufacturer | Huajing Discrete Devices |
| Description | Silicon N-Channel Power MOSFET |
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： CS7N60FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
View CS7N60FA9HDY datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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CS7N60FA9HDY | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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CS7N60FA9R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
View all Huajing Discrete Devices datasheets
| Part Number | Description |
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