3DD13002R6 Datasheet - Huajing Microelectronics

3DD13002R6 NPN Transistor

1 3DD13002R6 NPN 3DD13002R6 2 2.1 2.2 TO-126 Tamb= 25 - Ta=25 Tc=25 VCE0 200 V VCB0 350 V VEB0 9 V IC 1 A 1.0 Ptot 18 W Tj 150 Tstg -55 150 Tamb= 25 15.0min 11.1max 4.4max 7.8max 2.8max 3.2max 30 1.27 0.74 1.65 2.29 2.29 0.5 BCE - - a: ICB0 VCB=350V, IE=0 IEB0 VEB=9V, IC=0 hFEa VCE=5V, IC=0.2A 10 VCE a sat IC=1A, IB=0.25A VBE a sat IC=1A, IB=0.25A tf VCC=60V, IC=0.6A ts 2IB1=-IB2=0.2A fT VCE=10V, IC=200mA f=1MHz 5 tp 300 s, 2% 0.1 mA 0.1 mA .

3DD13002R6-HuajingMicroelectronics.pdf