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3DD13012AN - Silicon NPN triple diffusion type bipolar transistor

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Part number 3DD13012AN
Manufacturer Huajing Microelectronics
File Size 160.65 KB
Description Silicon NPN triple diffusion type bipolar transistor
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3DD13012 AN NPN ， ， ， ， 、 。 NPN 3DD13012 AN ○R ● ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 15 120 V A W TO-3P(N) -10℃～40℃ 1 265℃ ＜85％ C B ，Ta= 25℃ - - - （tp＜5ms） （tp＜5ms） Ta=25℃ Tc=25℃ RθJC RθJA VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg E 750 400 9 15 30 7.5 15 3 120 150 -55～150 V V V A A A A W ℃ ℃ 2012 1.04 41.7 ℃/W ℃/W 1/4 3DD13012 AN ○R ，Ta= 25℃ - ICBO VCB=750V, IE=0 - ICEO VCE=400V, IB=0 - IEBO VEB=9V, IC=0 - VCBO IC=0.1mA - VCEO IC=1mA - VEBO IE=0.1mA hFE* VCE=5V, IC=3A hFE1 hFE2 - hFE1/ hFE2 VCE * sat hFE1:VCE=5V, IC=50mA hFE2:VCE=5V, IC=3A IC=12A, IB=3A - VBE * sat IC=12A, IB=3A ts tr UI9600，IC=0.5A tf fT VCE=10V, IC=0.
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