BT15N60A9F - Silicon FS Planar IGBT

Description

Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.1V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability.

Huajing Microelectronics

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Datasheet Details

Part number	BT15N60A9F
Manufacturer	Huajing Microelectronics
File Size	101.81 KB
Description	Silicon FS Planar IGBT
Datasheet	BT15N60A9F Datasheet
Additional preview pages of the BT15N60A9F datasheet.

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Full PDF Text Transcription

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Silicon FS Planar IGBT BT15N60A9F ○R General Description： Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. VCES IC Ptot TC=25℃） VCE(SAT) 600 15 25 2.1 V A W V Features： l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.

Published: Dec 6, 2016 |