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BT15N60A9F Datasheet, Huajing Microelectronics

BT15N60A9F Datasheet, Huajing Microelectronics

BT15N60A9F

datasheet Download (Size : 101.81KB)

BT15N60A9F Datasheet

BT15N60A9F igbt equivalent, silicon fs planar igbt.

BT15N60A9F

datasheet Download (Size : 101.81KB)

BT15N60A9F Datasheet

Features and benefits

l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.1V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capabilit.

Application

Aircondition、Welding、UPS… Absolute Maximum Ratings (Tc= 25℃ unless otherwise specified): Symbol Parameter VCES Co.

Description

Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. VCES IC Ptot TC=25℃) VCE(SAT) 600 15 25 2.1 V A W .

Image gallery

BT15N60A9F Page 1 BT15N60A9F Page 2 BT15N60A9F Page 3

TAGS

BT15N60A9F
Silicon
Planar
IGBT
Huajing Microelectronics

Manufacturer


Huajing Microelectronics

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