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BT25T120CKR Datasheet Silicon Fs Trench IGBT

Manufacturer: Huajing Microelectronics

Overview: Silicon FS Trench IGBT BT25T120 CKR ○R General.

General Description

: Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness.

VCES IC Ptot (TC=25℃) VCE(SAT) 1200 V 25 A 312 W 1.95 V

Key Features

  • l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ =1.95V @ IC =25A and TC = 25°C l Extremely enhanced avalanche capability.

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