Datasheet Details
| Part number | CS14N10A3 |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 456.18 KB |
| Description | Silicon N-Channel Power MOSFET |
| Download | CS14N10A3 Download (PDF) |
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| Part number | CS14N10A3 |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 456.18 KB |
| Description | Silicon N-Channel Power MOSFET |
| Download | CS14N10A3 Download (PDF) |
|
|
|
： CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy.
This device is suitable for use as a load switch and PWM applications.
The package form is TO-251, which accords with the RoHS standard.
Silicon N-Channel Power MOSFET CS14N10 A3 ○R General.
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