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CS16N60A8H - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS16N60A8H
Manufacturer Huajing Microelectronics
File Size 426.39 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS16N60A8H Datasheet

Full PDF Text Transcription for CS16N60A8H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS16N60A8H. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS16N60 A8H ○R General Description： CS16N60 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 16 180 0.41 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adap

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