CS16N60A8H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS16N60A8H
Manufacturer	Huajing Microelectronics
File Size	426.39 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS16N60A8H-HuajingMicroelectronics.pdf

CS16N60A8H Product details

Description

CS16N60 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 16 180 0.41 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220AB, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |