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CS1N50A1 - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤11Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.2pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS1N50A1
Manufacturer Huajing Microelectronics
File Size 544.43 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS1N50A1 Datasheet

Full PDF Text Transcription for CS1N50A1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS1N50A1. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS1N50 A1 ○R General Description： VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A VDMOSFETs, is obtained by the self-aligned ...

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-channel Enhanced ID 1.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 9.5 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤11Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor

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