l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche en.

Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter .

CS20N50 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 500 20 230 0.25 performance and enhance the avalanche ener.

CS20N50A8R

CS20N50A0R

CS20N50ANH

CS20N50ANR

CS20N50FA9R

CS20N60A8H

CS20N60A8R

CS20N60AND

CS20N60ANH

CS20N60FA9H

CS20N60FA9R

CS20N65A

CS20N65A1