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CS2N65FA9HY - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤5.0Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS2N65FA9HY
Manufacturer Huajing Microelectronics
File Size 732.93 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS2N65FA9HY Datasheet

Full PDF Text Transcription for CS2N65FA9HY (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS2N65FA9HY. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS2N65F A9HY ○R General Description： CS2N65F A9HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technol...

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nel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 2.0 27 4 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤5.0Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor an

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