CS3205B8 - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS3205B8
Manufacturer	Huajing Microelectronics
File Size	427.95 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS3205B8-HuajingDiscreteDevices.pdf

CS3205B8 Product details

Description

VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID（Silicon limited current） 120 A VDMOSFETs, is obtained by the self-aligned planar PD(TC=25℃) 230 W Technology which reduce the conduction loss, improve RDS(ON)Typ 7.6 mΩ switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220AB, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤8.5mΩ) l Low Gate Charge (Typical Data:74nC) l Low Reverse transfer capacitances(Typical:68pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |