CS4N60A7HD - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS4N60A7HD
Manufacturer	Huajing Microelectronics
File Size	339.75 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS4N60A7HD-HuajingMicroelectronics.pdf

CS4N60A7HD Product details

Description

CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-126F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test 600 V 4A 30 W 1.8 Ω.

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Published: Dec 6, 2016 |