Datasheet Details
| Part number | CS630A4H | 
|---|---|
| Manufacturer | Huajing Microelectronics | 
| File Size | 836.90 KB | 
| Description | Silicon N-Channel Power MOSFET | 
| Datasheet | 
        
           | 
    
		  | Part number | CS630A4H | 
|---|---|
| Manufacturer | Huajing Microelectronics | 
| File Size | 836.90 KB | 
| Description | Silicon N-Channel Power MOSFET | 
| Datasheet | 
        
           | 
    
CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 83 0.23 the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-252, which accords with the RoHS standard.
📁 CS630A4H Similar Datasheet