CS7N65 A0D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 V 7A
100 W 0.98 Ω.
Full PDF Text Transcription for CS7N65A0D (Reference)
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Silicon N-Channel Power MOSFET CS7N65 A0D ○R General Description： CS7N65 A0D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...
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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 7A 100 W 0.98 Ω Applications： Power switch circuit of adaptor and
CS7N65A0D Datasheet
