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CS8N60A8D - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS8N60A8D
Manufacturer Huajing Microelectronics
File Size 227.51 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS8N60A8D Datasheet

Full PDF Text Transcription for CS8N60A8D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS8N60A8D. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS8N60 A8D ○R General Description： CS8N60 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB,which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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