CS9N90ANHD - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

performance and enhance the avalanche energy.

Key Features

Fast Switching.
ESD Improved Capability.
Low Gate Charge (Typical Data: 65nC).
Low Reverse transfer capacitances(Typical: 13pF).
100% Single Pulse avalanche energy Test.

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CS9N90ANHD silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS9N90ANHD
Manufacturer	Huajing Microelectronics
File Size	543.83 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS9N90ANHD Datasheet

Full PDF Text Transcription for CS9N90ANHD (Reference)

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Silicon N-Channel Power MOSFET ○R CS9N90 ANHD General Description： CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technolog...

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l Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard. Features：  Fast Switching  ESD Improved Capability  Low Gate Charge (Typical Data: 65nC)  Low Reverse transfer capacitances(Typical: 13pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER.

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