l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 62nC) l Low Reverse transfer capacitances(Typical: 18pF) l 100% Single Pulse avalanche energy Test.
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Silicon N-Channel Power MOSFET CS9N90F A9D ○R General Description： CS9N90F A9HD the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technolog...
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l Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 900 9 60 0.9 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 62nC) l Low Reverse transfer capacitances(Typical: 18pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER.
CS9N90FA9D Datasheet
