CS9N90FA9D - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS9N90FA9D
Manufacturer	Huajing Microelectronics
File Size	770.94 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS9N90FA9D-HuajingMicroelectronics.pdf

CS9N90FA9D Product details

Description

CS9N90F A9HD the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 900 9 60 0.9 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 62nC) l Low Reverse transfer capacitances(Typical: 18pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |