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Huashan

H1008 Datasheet Preview

H1008 Datasheet

NPN SILICON TRANSISTOR

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Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I LI C O N T R AN S I S T O
H1008
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………800mW
VCBO——Collector-Base Voltage………………………………80V
VCEO——Collector-Emitter Voltage……………………………60V
VEBO——Emitter-Base Voltage………………………………8V
IC——Collector Current……………………………………700mA
TO-92
1EmitterE
2BaseB
3CollectorC
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
ICBO
IEBO
HFE(1)
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Cob
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Current Gain-Bandwidth Product
Output Capacitance
hFE Classification
Min Typ Max Unit
Test Conditions
100 nA VCB=60V, IE=0
100 nA VEB=5V, IC=0
40 400 VCE=2V, IC=50mA
0.2 0.4 V IC=500mA, IB=50mA
0.86 1.1 V IC=500mA, IB=50mA
80 V IC=100μA, IE=0
60 V IC=10mA, IB=0
8 V IE=10μAIC=0
30 50
MHz VCE=10V, IC=50mA
8 pF VCB=10V, IE=0f=1MHz
R
40—80
O
70—140
Y
120—240
GR
240—400




Huashan

H1008 Datasheet Preview

H1008 Datasheet

NPN SILICON TRANSISTOR

No Preview Available !

Shantou Huashan Electronic Devices Co.,Ltd.
H1008


Part Number H1008
Description NPN SILICON TRANSISTOR
Maker Huashan
Total Page 2 Pages
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