H1008
H1008 is NPN SILICON TRANSISTOR manufactured by Huashan.
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I LI C O N T R AN S I S T O
- - ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg-
- Storage Temperature………………………… -55~150℃ Tj-
- Junction Temperature…………………………………150℃ PC-
- Collector Dissipation…………………………………800m W VCBO-
- Collector-Base Voltage………………………………80V VCEO-
- Collector-Emitter Voltage……………………………60V VEBO-
- Emitter-Base Voltage………………………………8V IC-
- Collector Current……………………………………700m A
TO-92
1―Emitter，E 2―Base，B 3―Collector，C
- ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
ICBO IEBO HFE(1) VCE(sat) VBE(sat) BVCBO BVCEO BVEBO f T Cob
Characteristics
Collector Cut-off Current
Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Current Gain-Bandwidth Product
Output Capacitance
- h FE Classification
Min Typ Max Unit
Test Conditions
100 n A VCB=60V, IE=0
100 n A VEB=5V, IC=0
40 400 VCE=2V, IC=50m A
0.2 0.4 V IC=500m A, IB=50m A
0.86 1.1 V IC=500m A, IB=50m A
80 V IC=100μA, IE=0
60 V IC=10m A, IB=0
8 V IE=10μA，IC=0
30 50
MHz VCE=10V, IC=50m A
8 p F VCB=10V, IE=0，f=1MHz
R 40- 80
O 70- 140
Y 120- 240
GR 240- 400
Shantou Huashan Electronic Devices...
