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H2682 Datasheet

NPN SILICON TRANSISTOR

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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H2682
APPLICATIONS
. Audio Power Amplifie.
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature……………………………… 150
PC——Collector DissipationTc=25℃)…………………… 8W
PC——Collector DissipationTA=25℃)…………………… 1.2W
VCBO——Collector-Base Voltage………………………… 180V
VCEO——Collector-Emitter Voltage……………………… 180V
VEBO——Emitter-Base Voltage……………………………… 5V
IC——Collector Current……………………………………100mA
TO-126ML
1EmitterE
2CollectorC
3BaseB
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage 180
V IC=100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage 180
V IC=1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
5
V IE=10μAIC=0
ICBO Collector Cut-off Current
1 μA VCB=180V, IE=0
IEBO Emitter Cut-off Current
1 μA VEB=3V, IC=0
HFE1DC Current Gain
90 190
VCE=5V, IC=1mA
HFE2DC Current Gain
100 320 VCE=5V, IC=10mA
VCE(sat) Collector- Emitter Saturation Voltage
0.12 0.5 V IC=50mA, IB=5mA
VBE(sat) Base-Emitter Saturation Voltage
0.8 1.5 V IC=50mA, IB=5mA
ft Current Gain-Bandwidth Product
200 MHz VCE=10V, IC=20mA,
Cob Output Capacitance
3.2 5.0 pF VCB=10V, IE=0,f=1MHz
hFE Classification
O
100200
Y
160320


Part Number H2682
Description NPN SILICON TRANSISTOR
Maker Huashan
Total Page 1 Pages
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