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GM72V66841ELT - 2M x 8-Bit x 4 Bank SDRAM

This page provides the datasheet information for the GM72V66841ELT, a member of the GM72V66841Exx 2M x 8-Bit x 4 Bank SDRAM family.

Datasheet Summary

Description

The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock.

Features

  • PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2).
  • 3.3V single Power supply.
  • LVTTL interface.
  • Max Clock frequency 143/133/125/100MHz.
  • 4,096 refresh cycle per 64 ms.
  • Two kinds of refresh operation Auto refresh / Self refresh.
  • Programmable burst access capability ; - Sequence:Sequential / Interleave - Length :1/2/4/8/FP.
  • Programmable CAS latency : 2/3.
  • 4 Banks can operate independently or simultaneously.

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Datasheet preview – GM72V66841ELT

Datasheet Details

Part number GM72V66841ELT
Manufacturer Hynix Semiconductor
File Size 86.71 KB
Description 2M x 8-Bit x 4 Bank SDRAM
Datasheet download datasheet GM72V66841ELT Datasheet
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Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock. The GM72V66841ET/ELT provides four banks of 2,097,152 word by 8 bit to realize high bandwidth with the Clock frequency up to 143 Mhz. Features * PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2) * 3.
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