GM72V66841ELT - 2M x 8-Bit x 4 Bank SDRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	GM72V66841ELT
Manufacturer	Hynix Semiconductor
File Size	86.71 KB
Description	2M x 8-Bit x 4 Bank SDRAM
Datasheet	GM72V66841ELT Datasheet
Note	This datasheet PDF includes multiple part numbers: GM72V66841ELT, GM72V66841Exx. Please refer to the document for exact specifications by model.
Additional preview pages of the GM72V66841ELT datasheet.

Product details

Description

The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock.

Features

PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2).
3.3V single Power supply.
LVTTL interface.
Max Clock frequency 143/133/125/100MHz.
4,096 refresh cycle per 64 ms.
Two kinds of refresh operation Auto refresh / Self refresh.
Programmable burst access capability ; - Sequence:Sequential / Interleave - Length :1/2/4/8/FP.
Programmable CAS latency : 2/3.
4 Banks can operate independently or simultaneously.

📁 Similar Datasheet

GM72V66841ELT - 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)
GM72V66841ET - 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)
GM72V66841Exx - 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)
GM72V66841CLT - 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)
GM72V66841CT - 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)
GM72V661641D - 1M word x 16-Bit x 4 Bank SDRAM (LG Semicon)
GM72V661641DI - 1M word x 16-Bit x 4 Bank SDRAM (LG Semicon)
GM72V661641DI - 1M word x 16-Bit x 4 Bank SDRAM (LG Semicon)

Other Datasheets by Hynix Semiconductor

GM72V66841ET - 2M x 8-Bit x 4 Bank SDRAM
GM72V66841Exx - 2M x 8-Bit x 4 Bank SDRAM
GM72V66841ET - 2M x 8-Bit x 4 Bank SDRAM
GM72V66841Exx - 2M x 8-Bit x 4 Bank SDRAM
GM72V66841ET - 2M x 8-Bit x 4 Bank SDRAM
GM72V66841Exx - 2M x 8-Bit x 4 Bank SDRAM

Published: Nov 18, 2016 |