* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During
H55S5122EFR-A3M Datasheet (949.60 KB)
H55S5122EFR-A3M
Hynix Semiconductor
949.60 KB
512mbit (16mx32bit) mobile sdr memory.
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.
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