Part number: H55S5132EFR-60M
Manufacturer: Hynix Semiconductor
File Size: 949.60KB
Download: 📄 Datasheet
Description: 512Mbit (16Mx32bit) Mobile SDR Memory
*
*
*
Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION .
which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304x32. Mobile SDRAM is a typ.
and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Sep. 2010 1
il;o;nar
512Mbit (16Mx32bit) Mobile SDR Memory H55S5122EFR Series / H55S5132EFR Se.
Image gallery
TAGS
📁 Related Datasheet
H55S5132EFR-75M - 512Mbit (16Mx32bit) Mobile SDR Memory
(Hynix Semiconductor)
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,19.
H55S5132EFR-A3M - 512Mbit (16Mx32bit) Mobile SDR Memory
(Hynix Semiconductor)
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,19.
H55S5132EFR - 512Mbit (16Mx32bit) Mobile SDR Memory
(Hynix Semiconductor)
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,19.
H55S5122EFR - 512Mbit (16Mx32bit) Mobile SDR Memory
(Hynix Semiconductor)
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,19.
H55S5122EFR-60M - 512Mbit (16Mx32bit) Mobile SDR Memory
(Hynix Semiconductor)
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,19.
H55S5122EFR-75M - 512Mbit (16Mx32bit) Mobile SDR Memory
(Hynix Semiconductor)
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,19.
H55S5122EFR-A3M - 512Mbit (16Mx32bit) Mobile SDR Memory
(Hynix Semiconductor)
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,19.
H55S1222EFP-60E - 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
(Hynix Semiconductor)
www..com
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Specification of 128M (4Mx32bit) Mobile SDRAM
Memory Cell Array
- Organiz.
H55S1222EFP-60M - 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
(Hynix Semiconductor)
www..com
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Specification of 128M (4Mx32bit) Mobile SDRAM
Memory Cell Array
- Organiz.
H55S1222EFP-75E - 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
(Hynix Semiconductor)
www..com
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Specification of 128M (4Mx32bit) Mobile SDRAM
Memory Cell Array
- Organiz.
