H5MS1G22MFP Description
and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
H5MS1G22MFP Key Features
- Mobile DDR SDRAM
- Double data rate architecture: two data transfer per clock cycle
- Mobile DDR SDRAM INTERFACE
- x32 bus width
- Multiplexed Address (Row address and Column address)
- BURST LENGTH
- SUPPLY VOLTAGE
- 1.8V device: VDD and VDDQ = 1.7V to 1.95V
- MEMORY CELL ARRAY
- 1Gbit (x32 device) = 8M x 4Bank x 32 I/O