H5MS5132DFR, H5MS5122DFR Datasheet - Hynix Semiconductor

H5MS5132DFR Mobile DDR SDRAM 512Mbit

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Jul. 2008 1 www.DataSheet4U.net 11 Mobile DDR SDRAM 512Mbit (16M x 32bit) H5MS5122DFR Series / H5MS5132DFR Series Document Title 512MBit (4Ban.

H5MS5132DFR Features

* SUMMARY

* Mobile DDR SDRAM - Double data rate architecture: two data transfer per clock cycle

* Mobile DDR SDRAM INTERFACE - x32 bus width - Multiplexed Address (Row address and Column address)

* BURST LENGTH

* SUPPLY VOLTAGE - 1.8V device: VDD and VDDQ = 1.7V to 1.95V

* MEMORY C

H5MS5122DFR_HynixSemiconductor.pdf

H5MS5132DFR Datasheet Preview — This datasheet PDF includes multiple part numbers: H5MS5132DFR, H5MS5122DFR. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H5MS5132DFR, H5MS5122DFR

Manufacturer:

Hynix Semiconductor

File Size:

2.30 MB

Description:

Mobile ddr sdram 512mbit.

Note:

This datasheet PDF includes multiple part numbers: H5MS5132DFR, H5MS5122DFR.
Please refer to the document for exact specifications by model.

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H5MS5132DFR H5MS5122DFR Mobile DDR SDRAM 512Mbit Hynix Semiconductor

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