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HY27SA081G1M Datasheet, Hynix Semiconductor

HY27SA081G1M memory equivalent, (hy27saxxx) 1gbit (128mx8bit / 64mx16bit) nand flash memory.

HY27SA081G1M Avg. rating / M : 1.0 rating-13

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HY27SA081G1M Datasheet

Features and benefits

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or .

Application

FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pin.

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