HY27UF081G2M Datasheet - Hynix Semiconductor

(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory

HY27UF081G2M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufact

HY27UF081G2M General Description

The HYNIX HY27(U/S)F(08/16)1G2M series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can.

HY27UF081G2M Datasheet (420.81 KB)

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HY27UF081G2M

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Hynix Semiconductor

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420.81 KB

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(hy27uf(08/16)1g2m / hy27sf(08/16)1g2m) 1gbit (128mx8bit/64mx16bit) nand flash memory.
( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document .

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TAGS

HY27UF081G2M HY27UF08 161G2M HY27SF08 161G2M 1Gbit 128Mx8bit 64Mx16bit NAND Flash Memory Hynix Semiconductor

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HY27UF081G2M Features

HY27UF081G2M General Description

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